Polycrystalline silicon ingot casting furnance

Made of the sun level silicon ingot , can also be used to other semiconductor materials purification.

Features,

1、High control accuracy, crystallization rate adjusted freely



2、Using inductive melting method, increase mixing, melting speed solution



3、Directional solidification insulation adopts specially made heating power



4、Has three current balance, maintenance costs low



5、Using thermostatic degrees controlling instrument



Main technical parameters



Melting capacity 10-300KG



Power 50-400KW



Heating rate 40 ℃ / Min



Furnace temperature uniformity + 5 ℃



Limiting vacuum 2Pa 6.67 x 10 u2013



Pressure increase rate 0.01 PaL/S



Rated inflatable pressure 0.05 Mpa



Bubble means drop unidirectional solidification



Servo control scope 0.01 mm - 6mm/Min



Directional solidification rat 0.03 mm - 0.5 mm/Min



Crucible rising velocity 80 to 100 mm/Min